avionics applications rf & microwave transistors .400 x .400. 2lfl (m138) hermetically sealed description the SD1540-08 is a gold metallized silicon, npn power transistor designed for applications requiring high peak power and low duty cycles such as iff, dme and tacan. the sd1540 is packaged in a metal/ceramic package with internal input/out- put matching resulting in improved broadband per- formance and a low thermal resistance. pin connection branding sd1540-8 order code SD1540-08 absolute maximum ratings (t case = 25 c) symbol parameter value unit v cbo collector-base voltage 65 v v ces collector-emitter voltage 65 v v ebo emitter-base voltage 3.5 v i c device current 22 a p diss power dissipation 875 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance 0.20 c/w SD1540-08 1. collector 3. emitter 2. base 4. base thermal data november 1992 . designed for high power pulsed iff, dme, tacan applications . 350 watts (typ.) iff 1030 - 1090 mhz . 300 watts (min.) dme 1025 - 1150 mhz . 290 watts (typ.) tacan 960 - 1215 mhz . 6.3 db min. gain . refractory gold metallization . emitter ballasting and low thermal resistance for reliability and ruggedness . 20:1 load vswr capability at specified operating conditions . input/output matched, common base configuration 1/5
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 1025 1150mhz p in = 70 w v ce = 50 v 300 w g p f = 1025 1150mhz p in = 70 w v ce = 50 v 6.3 db h c f = 1025 1150mhz p in = 70 w v ce = 50 v 35 % note: pulse width = 10 m sec, duty cycle = 1% this device is suitable for use under other pulse width/duty cycle c onditions. please contact the factory for specific applications assistance. static symbol test conditions value unit min. typ. max. bv cbo i c = 10ma i e = 0ma 65 v bv ces i c = 25ma v be = 0v 65 v bv ebo i e = 5ma i c = 0ma 3.5 v i ces v ce = 50v i e = 0ma 25 ma h fe v ce = 5v i c = 1a 10 dynamic typical performance power output vs power input power output vs frequency SD1540-08 2/5
typical input impedance typical collector load impedance impedance data efficiency vs power input efficiency vs frequency typical performance (cont'd) SD1540-08 3/5
c1,c2. c3, c4 : .6 - 4.5pf johanson gigatrim c5 : 1000 m f, 63v, electrolytic c6 : 100pf chip capacitor across .090 gap l1 : 2 turns #24 .12 i.d., spaced wire diameter l2 : 4 turns #24, .07 i.d., spaced wire diameter z1 : .404 x .075 z2 : .263 x .995 z3 : .483 x .077 z4 : .350 x 1.203 z5 : .505 x 1.200 with two notches .05 long by .068 wide z6 : .335 x .076 z7 : .260 x .442 z8 : .310 x .082 all dimension are in inches test circuit SD1540-08 4/5
package mechanical data ref.: dwg. no.12-0138 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a SD1540-08 5/5
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